leshan radio company, ltd. 1/3 1 3 2 lmb t a63 l t1g lmb t a64 l t1g case 318?08, style 6 sot?23 (to?236ab) darlington transistors pnp silicon we declare that the material of product compliance with rohs requirements. collector 3 base 1 emitter 2 maximum ratings rating symbol value unit collectoremitter voltage v ces 30 vdc collectorbase voltage v cbo 30 vdc emitterbase voltage v ebo 10 vdc collector current continuous i c 500 madc device marking lmbta63lt1g = 2u; lmbta64lt1g = 2v thermal characteristics characteristic symbol max unit total device dissipation fr5 board, (1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg 55 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collectoremitter breakdown voltage (i c = 100 m adc) v (br)ceo 30 vdc collector cutoff current (v cb = 30 vdc) i cbo 100 nadc emitter cutoff current (v eb = 10 vdc) i ebo 100 nadc on characteristics dc current gain (3) (i c = 10 madc, v ce = 5.0 vdc) lmbta63lt1g (i c = 10 madc, v ce = 5.0 vdc) lmbta64lt1g (i c = 100 madc, v ce = 5.0 vdc) lmbta63lt1g (i c = 100 madc, v ce = 5.0 vdc) lmbta64lt1g h fe 5,000 10,000 10,000 20,000 collectoremitter saturation voltage (i c = 100 madc, i b = 0.1 madc) v ce(sat) 1.5 vdc baseemitter on voltage (i c = 100 madc, v ce = 5.0 vdc) v be(on) 2.0 vdc smallsignal characteristics currentgain bandwidth product (i c = 10 madc, v ce = 5.0 vdc, f = 100 mhz) f t 125 mhz 1. fr5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width 300 m s, duty cycle 2.0%.
leshan radio company, ltd. 2/3 lmb t a63 l t1g lmb t a64 l t1g figure 1. dc current gain i c , collector current (ma) 200 -1.0 2.0 h fe , dc current gain (x1.0 k) t a = 125 c 25 c -55 c v ce = -2.0 v -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -100 -300 100 70 50 30 20 10 7.0 5.0 3.0 -0.3 -0.5 -0.7 -70 -200 -5.0 v -10 v i b , base current ( m a) figure 2. collector saturation region v ce , collector-emitter voltage (volts ) -2.0 -0.6 t a = 25 c i c = -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.1-0.2 -1 -2 -5 -10 -20 -50 -100-200 -500 -0.5 -1k-2k -10k -10 ma -50 ma -100 ma -175 ma -300 ma -5k i c , collector current (ma) figure 3. aono voltage v, voltage (volts) -2.0 0 -0.3 t a = 25 c v be(on) @ v ce = -5.0 v -1.6 -1.2 -0.8 -0.4 v ce(sat) @ i c /i b = 1000 i c /i b = 100 -0.5 -1.0 -2 -3 -5 -10 -20 -30 -50 -100 -200 -300 10 4.0 3.0 2.0 0.1 figure 4. high frequency current gain i c , collector current (ma) v ce = -5.0 v f = 100 mhz t a = 25 c |h fe |, high frequency current gain 1.0 0.4 0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1k v be(sat) @ i c /i b = 100
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. 3/3 lmb t a63 l t1g lmb t a64 l t1g
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